Properties of ferroelectric SrBi₂Ta₂O₉-Bi₄Ti₃O₁₂ thin films derived by the sol-gel methodXUSHENG WANG; ISHIWARA, Hiroshi.Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 103-110, issn 0022-0248, 8 p.Article

Operation principle and development trend of transistor-type ferroelectric memoriesTOKUMITSU, Eisuke; ISHIWARA, Hiroshi.Hyomen gijutsu. 2000, Vol 51, Num 7, pp 669-675, issn 0915-1869Article

Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer : Fundamentals and Applications of Advanced Semiconductor DevicesSONG, Young-Uk; ISHIWARA, Hiroshi; OHMI, Shun-Ichiro et al.IEICE transactions on electronics. 2011, Vol 94, Num 5, pp 767-770, issn 0916-8524, 4 p.Article

Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate InsulatorMIN LIAO; ISHIWARA, Hiroshi; OHMI, Shun-Ichiro et al.IEEE electron device letters. 2011, Vol 32, Num 11, pp 1600-1602, issn 0741-3106, 3 p.Article

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors : Fundamentals and Applications of Advanced Semiconductor DevicesLIAO, Min; ISHIWARA, Hiroshi; OHMI, Shun-Ichiro et al.IEICE transactions on electronics. 2012, Vol 95, Num 5, pp 885-890, issn 0916-8524, 6 p.Article

Metal-ferroelectric-insulator-Si devices using HfTaO buffer layersLU, Xu-Bing; MARUYAMA, Kenji; ISHIWARA, Hiroshi et al.Semiconductor science and technology. 2008, Vol 23, Num 4, issn 0268-1242, 045002.1-045002.5Article

Excellent Ferroelectricity of Thin Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Films and Low Voltage Operation of Capacitors and DiodesFUJISAKI, Sumiko; FUJISAKI, Yoshihisa; ISHIWARA, Hiroshi et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2007, Vol 54, Num 12, pp 2592-2594, issn 0885-3010, 3 p.Conference Paper

Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory ApplicationsMINGHUA TANG; XIAOLEI XU; ZHI YE et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 2, pp 370-375, issn 0018-9383, 6 p.Article

Recent progress of ferroelectric memoriesISHIWARA, Hiroshi.International journal of high speed electronics and systems. 2002, Vol 12, Num 2, pp 315-323, 9 p.Conference Paper

Crystal structure and ferroelectric properties of (Bi, La)₄(Ti, Si)₃O₁₂ as a bulk ferroelectric materialIDEMOTO, Yasushi; MIYAHARA, Takahiro; KOURA, Nobuyuki et al.Solid state communications. 2003, Vol 128, Num 6-7, pp 255-259, issn 0038-1098, 5 p.Article

Ultra-thin ferroelectric films modified by Bi₂SiO₅KIJIMA, Takeshi; ISHIWARA, Hiroshi.Ferroelectrics (Print). 2002, Vol 271, pp 289-295, issn 0015-0193Conference Paper

Properties of ferroelectric Pb(Zr, Ti)O₃-SiO₂-B₂O₃ glass-ceramic thin films derived by sol-gel methodXUSHENG WANG; ISHIWARA, Hiroshi.Ferroelectrics (Print). 2002, Vol 271, pp 3-8, issn 0015-0193Conference Paper

Advanced MFIS structure with Al₂O₃/Si₃N₄ stacked buffer layerFUJISAKI, Yoshihisa; OGASAWARA, Satoru; ISHIWARA, Hiroshi et al.Ferroelectrics (Print). 2003, Vol 292, pp 3-13, issn 0015-0193, 11 p.Conference Paper

Memory effect in ferroelectric-gate field effect transistors using 0.1μm-thick silicon-on-insulator substratesAIZAWA, Koji; ISHIWARA, Hiroshi.Ferroelectrics (Print). 2002, Vol 271, pp 173-178, issn 0015-0193Conference Paper

Characterization of (Bi, La)₄Ti₃O₁₂ film formed on pt electrode with (Cr, Ti)N/TiN/Ti barrier layersOHKI, Hiroshi; ISHIWARA, Hiroshi.Ferroelectrics (Print). 2003, Vol 293, pp 101-109, issn 0015-0193, 9 p.Conference Paper

Evaluation of ferroelectric/silicon interface state density in ferroelectric-gate transistors using a charge pumping methodAIZAWA, Koji; ISHIWARA, Hiroshi.Ferroelectrics (Print). 2003, Vol 293, pp 119-126, issn 0015-0193, 8 p.Conference Paper

Al growth on Si(111)(√3×√3)-Ga surfaces at room temperatureMAEHASHI, K; KATSUKI, H; NAKASHIMA, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 997-1000, issn 0021-4922, 1Conference Paper

Characterization of deep levels in Si-doped In_xAl_1-xAs layers grown by molecular beam epitaxyMALININ, A; TOMOZAWA, H; HASHIZUME, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1138-1142, issn 0021-4922, 1Conference Paper

Control of As precipitation in low-temperature GaAs by electronic and isoelectronic delta dopingTZYY MING CHENG; CHUN YEN CHANG; JIN HUA HUANG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1185-1189, issn 0021-4922, 1Conference Paper

Counter doped N-channel MOSFETs: mobility improvement and reverse short channel effect enhancementPLOEG, E. P. V; NODA, H; UMEDA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 878-881, issn 0021-4922, 1Conference Paper

Disordering of CdZnSe/ZnSe strained layer superlattices by ion implantationYOKOGAWA, T; MERZ, J; LUO, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1159-1161, issn 0021-4922, 1Conference Paper

Elastic scattering and depletion effects on current-voltage characteristics of gated resonant tunneling diodesLEE, C.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1236-1240, issn 0021-4922, 1Conference Paper

Electroluminescence of ballistic and phonon emitting electrons in the p-type base of AlGaAs/GaAs HBT structuresFUKAI, Y. K; FURUTA, T; ISHIBASHI, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1208-1212, issn 0021-4922, 1Conference Paper

Electron beam patterning mechanism of GaAs oxide mask layers used in in situ electron beam lithographyTANAKA, N; LOPEZ, M; MATSUYAMA, I et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1194-1198, issn 0021-4922, 1Conference Paper

Extremely high selective etching of porous Si for single etch-stop bond-and-etch-back silicon-on-insulatorSAKAGUCHI, K; SATO, N; YAMAGATA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 842-847, issn 0021-4922, 1Conference Paper